Abstract
An in situ transmission electron microscopy (TEM) microelectromechanical system (MEMS) device has been designed to utilize TEM imaging for measuring stress and strain of thin film micro-specimens while simultaneously recording the microstructure evolution. Digital image correlation is also used to measure local normal strain values by tracking edge features of the specimens. The device performance is compared to that of a similar MEMS device that utilizes capacitive sensors for stress and strain measurements, using 100-nm thick Au thin film specimens. It is shown that there is a significant improvement in the noise levels from ∼1–2 MPa to ∼0.2 MPa and increased sensitivity with the capability of measuring small stress changes. The device can be used to perform both in situ TEM monotonic and transient tests (for activation volume measurements) to investigate the active plastic deformation mechanisms.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
