Abstract
Water and organic-based amorphous InGaZnO thin-film transistors (a-IGZO TFT) were fabricated and their electrical performances were analyzed. By comparing the threshold voltage, subthreshold slope, and field-effect mobility with scaling characteristics, we found that the a-IGZO TFT performances were mainly dependent on the solvent types and stirring times of the precursor solution. In addition, it is shown that the field-effect mobility values follow the Poole–Frenkel mobility model for water-based TFTs when the stirring time is under 24 h indicating that there are large defect density of states that degrade the field-effect mobility. When the stirring time is sufficiently long for the water-based sample, the sample shows superior field-effect mobility compared to the organic-based one, which is attributed to the high annealing efficiency of the water-based IGZO active layer compared to the organic-based one.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
