Abstract
The changes in the electrical and physical properties of HfO2films grown using atomic layer deposition (ALD) on strained and relaxed Si1-xGex (x=0.1, 0.2, 0.3) substrates after post-annealing have been studied. The Ge atoms which have already diffused into the HfO2 upper layer during deposition are drawn back to interfacial layer and substrate. This migration of Ge plays a key role in reducing the capacitance equivalent thickness (CET) competing with additional interfacial oxidation of substrate and Si diffusion. The larger amount of Ge diffusion for HfO2 grown on relaxed Si1-xGex results in further reduction of CET. This was expected to occur by the bonding nature of Si-Ge under different stress circumstances.
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