Abstract
The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0nm films of HfON and HfSiON after a 1000°C-10s activation annealing. X-ray photoelectron spectroscopy was used to determine the chemical composition of the dielectrics. No evidence of crystallization was detected in 1.5nm HfON or HfSiON films after the activation annealing. The HfON film showed crystallization at a 2.0nm thickness whereas the 2.0nm HfSiON film remained amorphous.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
