Abstract
The aim of this work is to study the electrical properties of Mg24 and Zn64 implanted and annealed samples (semi-insulating GaAs substrates,n+ doped GaAs epilayers, GaAs-GaAlAs heterostructures) with the final objective of realizing the contact region for the p-type base layer of heterojunction bipolar transistor (HBT). We show that, for HBT applications, Mg+ is a more suitable candidate because its characteristics (depth, concentration) are easier to control: they are not very sensitive to doping level and composition of different layers. Low specific contact resistivity (<10-5Ωcm2) have been obtained with Au-Mn alloy on Mg+ implanted GaAs.
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