Abstract
The new trend in semiconductor technology is search of new materials, which could replace silicon in specialized applications. One of them is zinc oxide (ZnO), a II–VI semiconductor. In this work we show how to obtain at relatively low temperature monocrystalline layers of ZnO using atomic layer deposition (ALD) method with reactive dimethylzinc (DMZn) and diethylzinc (DEZn) precursors. ZnO films were deposited on gallium nitride substrates at 300 °C. We compare the results obtained for these two organic zinc precursors. High resolution X-ray diffraction analysis proves that our ZnO layers are monocrystalline with FWHM of (00.2) peak 250 arcsec for DEZn and 335 arcsec for DMZn precursors.
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