Abstract
Diffusion of dopants in silicon is studied in nanostructures and benchmarked against the bulk diffusion. In thin Silicon On Insulator (SOI) MOSFET devices, the lateral diffusion of dopants in Si is expected to be different than in the bulk because of reduced dimension effects and segregation effects which become more severe due to the proximity of interfaces. The large spot size makes SIMS impractical to obtain the doping profile in lower dimensional structures. Thus, the lateral diffusion from source and drain regions into the channel is evaluated by electrical characterization after series of long anneals. In contrast to bulk, nanomembrane and nanoribbon structures which, as expected, show decrease of channel resistance with diffusion time, it is observed that in nanowires the channel resistance increases. This effect is a result of competing diffusion and strong interface segregation effects which slow up lateral diffusion and renders large portion of the dopants inactive.
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