Abstract
The DWELL (dots-in-a-well), DUWELL (dots-under-the-well), and GC-SRL (gradient-composition-strain-reducing-layer) concepts of InAs quantum dot epitaxial growth under identical conditions have been compared. The laser structures are designed for operation near 1.3 μm. An improved procedure is proposed for estimating the InAs growth rate. The dependence of the photoluminescence peak’s spectral position and intensity on the structure type and epitaxy conditions has been studied. A 10-stack DUWELL ridge waveguide laser diode with ground-state lasing at room temperature has been demonstrated.
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