Abstract
Magnetic tunnel junctions may experience failure due to local shortcuts in the insulating layers of such devices. The quality of the insulating layers of these devices must be analyzed. We use electrodeposition to decorate pinholes and analyze the density of pinholes and pinhole precursors. Electrical breakdown measurements can also be performed on magnetic tunnel junctions to predict the probability of such devices failing. We discuss both experimental methods and compare the results obtained. It is observed that the two methods yield the same results for the areal defect density.
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