Abstract
The work aims to improve the current and conductance characteristics of Molybdenum ditelluride and Black phosphorene in a novel 2D Field Effect transistor for different thickness level of oxide from 1 nm to 10 nm. Materials and Methods: Molybdenum ditelluride and Black phosphorene channel-based Field Effect transistor was chosen as two groups having 16 samples each. The current characteristics were simulated by varying the oxide thickness. Reducing the oxide thickness of MOTE2 will lead to increased current and conductance characteristics. The novel 2D FET is simulated to obtain better current characteristics based on nanotechnology and reducing the oxide thickness of BP will lead to increased current and conductance characteristics in novel 2D FET. Results: MOTE2 based Novel 2D FET has higher conductance than BP based 2D FET. Gate oxide thickness was at 1 nm during maximum conductivity for MOTE2 based 2D FET and 10 nm for BP based Novel 2D FET in NanoHub simulation tool. The results were obtained with a level of significance value is 0.001 for current and 0.0001 for conductance, and pretest power value of 80% using SPSS tools. Conclusion: Within the limit of study, MOTE2 based Novel 2D Field-effect transistor has better current (2876.39) and conductance (9.587e-03) mho characteristics than BP based 2D FET current (1250.58) and conductance (4.168e-03) mho.
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