Abstract
Continuous scaling in back-end-of-line interconnects brings about a significant increase in the line resistance for advanced integrated circuits. To alleviate this issue, cobalt (Co) is proposed to replace copper (Cu) as an interconnect conductor. Effects of different metals (Cu and Co) on the electrical characteristics and reliability of the porous carbon-doping low-dielectric-constant (low-k) films were evaluated in this study. Compared with Cu/porous low-k integration, Co/porous low-k integration exhibited less degradation in the electrical characteristics and reliability under thermal or electrical stress. This study suggests that Co interconnects can provide barrier-free or barrier-less processing, which is a promising strategy for advanced semiconductor technology nodes.
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