Abstract
The response of silicon–silicon–CsI(Tl) telescopes, developed within the FAZIA collaboration, to fragments produced in nuclear reactions 84Kr+120-124Sn at 35AMeV, has been used to study ion identification methods. Two techniques are considered for the identification of the nuclear products in the silicon stages. The standard ΔE−E one requires signals induced in two detection layers by ions punching through the first one. Conversely, the digital Pulse Shape Analysis (PSA) allows the identification of ions stopped in the first silicon layer. The capabilities of these two identification methods have been compared for different mountings of the silicons, i.e. rear (particles entering through the low electric field side) or front (particles entering through the high electric field side) side injection. The ΔE−E identification method gives exactly the same results in both configurations. At variance, the pulse shape discrimination is very sensitive to the detector mounting. In case of rear side injection, the identification with the “energy vs. charge rise time” PSA method presents energy thresholds which are significantly lower than in the case of front side injection.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.