Abstract
Characteristics of thin-film transistors (TFTs) with amorphous In2O3 (InO1.2) and carbon-doped In2O3 (InO1.16C0.04) channels by post-metallization annealing (PMA) process were investigated. The InO1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the InO1.16C0.04 TFT exhibited superior properties such as a threshold voltage (V th) of 3.2 V and a high mobility of 20.4 cm2 V−1 s−1 at PMA 150 °C because of the reduction of excess oxygen vacancies. A large negative V th shift was observed for the InO1.2 TFT for 10 800 s in N2 under zero bias voltage while there was no V th change for the InO1.16C0.04 TFT.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
