Abstract
Thermal activation energies of bulk and interface-generated currents for high-resistivity silicon detectors are presented and compared. In non-irradiated devices it is shown that the bulk generation activation energy is strongly dependent on the processing technology, with no significant influence of material resistivity. The activation energies of the interface-generated currents on the other hand are shown to be process, resistivity, and orientation independent. The concentration cross-section products of both bulk and interface-generation centers are shown to be process dependent. Samples with resistivity range of 2–28 kΩ cm and orientations 〈1 1 1〉 and 〈1 0 0〉 were used. The activation energies of the current generating centers of proton-irradiated samples are presented.
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