Abstract
High‐temperature power electronics is an advancing area of research, especially given the widespread availability of wide bandgap semiconductors. Herein, a suitability analysis of (1−x)BiScO3−xPbTiO3 (BSPT) as a material for high‐temperature piezoelectric transformers (PTs) is presented and compared to state‐of‐the‐art Pb(Zr1−xTix)O3 (PZT). Initially, both materials are compared using a variety of metrics to prove the suitability of BSPT as a material for constructing PTs specifically for high‐temperature applications. PTs based on the two materials are designed and fabricated, and then subsequently characterized using impedance measurements. Finally, half‐bridge resonant inverters are constructed using both PTs and the performance of each inverter measured over a range of ambient temperatures. The result of these experiments confirms the suitability of BSPT for PT applications and shows the excellent performance of BSPT PTs at temperatures in excess of that possible with PZT‐based PTs.
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