Abstract
Iron sulfide oxide thin films were deposited by electrochemical deposition and annealed with sulfur powder. The composition ratio of the as-deposited film is Fe:S:O = 1:1.5:0.4. X-ray diffraction (XRD) and Raman measurement results showed that the as-deposited film is amorphous. After the annealing at 400 °C with sulfur powder, oxygen content was significantly reduced, and crystallization of FeS2 pyrite was confirmed by XRD. Heterojunction cells were fabricated using both the as-deposited and annealed films with ZnO thin film as the partner, and rectification properties were confirmed for all the samples. However, the leakage current was increased and the forward current was decreased by the annealing. Thus, the as-deposited amorphous film seems to be more suited for photovoltaic application than the annealed ones.
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