Abstract
The photovoltaic performances of i-ZnO/CdS/Cu(In,Ga)Se2(CIGS) solar cell with different window architectures of SnO2:In2O3(ITO), Al2O3:ZnO (AZO) and ITO/AZO, were experimentally compared. The solar cell with ITO deposited directly on i-ZnO layer showed an abnormal current-voltage characteristic as having a shunt path. Both of AZO and ITO/AZO resulted in normal current-voltage behavior as far as AZO is contacting ZnO.
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