Abstract
Four different capping structures for high-temperature annealing of GaN were studied. The studied caps included a two-layer MOCVD-deposited cap and three different MOCVD + sputtered layer capping structures. After an annealing pulse of 1500 °C, the MOCVD cap surface roughened due to decomposition of the underlying GaN. GaN decomposition was evident via observation of thermal decomposition pits after etching of the AlN caps. It was found that the combination of an MOCVD cap with a sputtered cap greatly reduced the amount of GaN decomposition as the density of thermal etch pits decreased by 99.4%.
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