Abstract
Behavior of deuterium atoms in fused silica, which were implanted by 80‐keV D+ (D2+, D3+) ions or doped thermally by D2 (or D2O), was studied by infrared Fourier transform spectroscopy (FTIR) and by ESR spectroscopy. When 80‐keV deuteron ions are implanted into fused silica, OD bonds are formed. The OD bonds are also formed by thermal doping with D2 or D2O. When the deuterated silica is γ‐ray irradiated at 77 K, D atoms are formed by rupture of the OD bonds. The efficiency of the OD bond rupture in the deuteron‐implanted silica is much less than that in the D2‐doped silica. It is concluded from the results of thermal annealing that the low efficiency of the OD bond rupture in the deuteron‐implanted silica is due to the radiation damage accompanying the implantation process. However, the decay rate and detrapping energy of deuterium atoms, once formed in the silica, are similar in both cases.
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