Abstract
Using the Non-local Empirical Pseudopotential method (bandstructure), Full-Band Monte-Carlo Simulations (transport), self-consistent Poisson-Schrodinger (electrostatics) and detailed Band-To-Band-Tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of surface/channel orientation, uniaxial- and biaxial-strain, band-structure, mobility, and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, strained-Si and strained-Ge, p-MOS DGFETs have been presented and the optimum strain and channel/surface orientations for highest drive-lowest delay-lowest leakage have been obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
