Abstract
To make full use of the solar spectrum, the performances of Al0.3Ga0.7As/GaAs/Ge and Al0.3Ga0.7As/GaAs/Si/Ge have been simulated using a one-dimensional device simulator called personal computer oe dimension (PC1D). The dependencies of simulated current density–voltage (J–V) and external quantum efficiency (EQE) results on the thicknesses of each sub-cell have been thoroughly analyzed to determine the preferred thickness. Compared to Al0.3Ga0.7As/GaAs/Ge (1.5/5/50 μm), Al0.3Ga0.7As/GaAs/Si (1.5/5/180 μm) has an increase of 0.36 V for open-circuit voltage (Voc) but a slight decrease of 1.55 mA/cm2 for short-circuit current density (Jsc). Subsequently, a monolithic InGaP/GaAs/InGaNAsSb (1.9/1.42/1 eV, 3 J) cell has been mechanically stacked on a Ge cell with four terminals. The Jsc value of 14 mA/cm2 and 6.5 mA/cm2 is calculated for each sub-cell of 3 J cell and bottom Ge cell with integration of EQE measurements. In addition, the TiO2/SiO2/TiO2 (150 nm/1 µm/150 nm, trilayer) interface provides a thermal conductance (2.9 × 106 W K−1) comparable to the direct bond interface. It is believed that the architecture of InGaP/GaAs/InGaNAsSb on the Ge cell with a trilayer interface between is the preferred choice.
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