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Abstract
Electrical characterization of zirconium oxide (ZrO 2) based metal-oxide-semiconductor (MOS) structures has been carried out. ZrO 2 films have been atomic layer deposited (ALD) by using novel cyclopentadienyl-based precursors, which have recently revealed themselves as very adequate in terms of thermal stability and high permittivity of the dielectrics deposited. Our results demonstrate good quality of the films, especially when mixed alkylamido-cyclopentadienyl precursors are used on SiO 2/Si substrates. Conduction mechanisms in these MIS capacitors were studied, with moderately or highly-doped silicon used as substrate.
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