Abstract
100-W class power storage systems were developed, which comprised spherical Si solar cells, a maximum power point tracking charge control-ler, a lithium-ion battery, and one of two different types of direct current (DC)-alter- nating current (AC) converters. One inverter used SiC met-al-oxide-semicon-ductor field-effect transistors (MOSFETs) as switching devices while the other used Si MOSFETs. In these 100-W class inverters, the ON resistance was considered to have little influence on the efficiency. Nevertheless, the SiC-based inverter exhibited an approximately 3% higher DC-AC conversion efficiency than the Si-based inverter. Power loss analysis indicated that the higher efficiency resulted predominantly from lower switching and reverse recovery losses in the SiC MOSFETs compared with in the Si MOSFETs.
Highlights
Modern power device requirements include a high blocking voltage, a low ON resistance, a high switching frequency, and good reliability
We developed photovoltaic power generation systems based on two different direct current (DC)-alternating current (AC) converters
We developed 100-W class power storage systems composed of spherical Si solar cells, an maximum power point tracking (MPPT) controller, a Li-ion battery, and one of two types of DC-AC converters
Summary
Modern power device requirements include a high blocking voltage, a low ON resistance, a high switching frequency, and good reliability. These requirements have led to great interest in power devices based on wide gap semiconductors such as GaN and SiC [1] [2] [3]. This means that a thinner epi layer is required to block the same voltage compared with Si devices. Switching devices with much lower ON resistances can be fabricated using GaN or SiC. A comparative study for Si- and SiCbased power converters was reported in [12] [13]. Concerning photovoltaic power applications, performances of total systems using these converters should be compared
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