Abstract
Pb(Zr1-xTix)O3 (PZT) thin films were prepared by sol-gel method on stainless steel (SS) an on platinum-coated silicon substrate (Pt/Si). The structure revealed by X-ray diffraction shows stron crystallographic orientation: (110) and (100), respectively. The crystallite size shows significa differences: d(SS)(001) = 27.1 nm, d(Pt)(h00) = 88 nm. The tetragonal splitting is (Δc/c)(SS) = 3.55 % an (Δc/c)(Pt) = 3.32 %. The ferroelectric hysteresis loop in the static mode is characterized by remanentpolarization of 25 μC/cm2 and coercive field of 45 kV/cm for SS substrate, while for Pt/Si substrate the values are 10 μC/cm2 and 39 kV/cm, respectively. The leakage current is about 3 orders of magnitude lower in the PZT film deposited on SS. The better properties of the PZT deposited on S are explained by the presence of large single crystal-like crystallites, which make the film closer to epitaxial ones. The results show the potential of growing epitaxial films on low-price substrates such as stainless-steel.
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