Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data

Abstract

This paper presents the comparison of Low-Dropout Voltage Regulators (LDOs) designed with Nanowire (NW-TFET) and Line Tunnel FET (Line-TFET), in which the transistors were modeled using Verilog-A and Lookup Tables (LUTs) obtained from experimental data. The LDOs were designed in two gm/ID, load currents and capacitances conditions: 7 V−1, 100 µA, 100 pF and 10.5 V−1, 10 µA, 10 pF. For comparison, a MOSFET LDO was designed with TSCM 0.18 µm PDK. It was observed that both TFET LDOs can be designed without the compensation capacitor to reach stability. The Line-TFET LDO delivers better specifications than the NW-TFET LDO, but with higher current consumption. Comparing with MOSFET LDO, both TFET LDOs present higher efficiency. The Line-TFET LDO showed higher loop gain and lower, but comparable, gain-bandwidth product (GBW) in both biases.