Abstract
In this paper, a comparison between horizontal and vertical OFET of Poly (3-Hexylthiophene) (P3HT) as an active semiconductor layer (p-type) was studied by using two different gate insulators (ZrO2 and PVA). The electrical performance output (Id-Vd) and transfer (Id-Vg) characteristics were investigated using the gradual-channel approximation model. The device shows a typical output curve of a field-effect transistor (FET). The analysis of electrical characterization was performed in order to investigate the source-drain voltage (Vd) dependent current and the effects of gate dielectric on the electrical performance of the OFET. This work also considered the effects of the capacitance semiconductor on the performance OFETs. The values of current, as calculated using MATLAB simulation, exhibited an increase with increasing source-drain voltage. Also, the organic transistor modeling software was used to evaluate the transconductance calculated. The best results for the vertical OFET were achieved using the gate insulators of ZrO2.
Highlights
Organic field effect transistor (OFET) is one of the most fundamental devices of organic semiconductor and an important component in various applications such as the organic logic circuit, OLED driving units, and various organic sensors, etc. [1]
Vertical organic thin-film transistors (VOTFT) have a vertical arrangement of their components which include the gate capacitor, source electrode, organic semiconductor, and drain electrode
The present work employed a sample of organic polymer (P3HT as an active layer) of the transistors to study the electrical properties of the horizontal OFET device
Summary
Organic field effect transistor (OFET) is one of the most fundamental devices of organic semiconductor and an important component in various applications such as the organic logic circuit, OLED driving units, and various organic sensors, etc. [1]. A study of the electrical performance (output and transfer characteristics) of P3HT horizontal and vertical OFETs for the gate dielectrics (ZrO2 and PVA) was studied by using the gradual-channel approximation model. The present work employed a sample of organic polymer (P3HT as an active layer) of the transistors to study the electrical properties of the horizontal OFET device. This material is presented and described in the following paragraph. Output Characteristics of P3HT based Horizontal OFET In this paragraph, we explain the current-voltage characteristics based on the gradual channel approximation for different gate insulators used by a monolayer ZrO2 and PVA. The output characteristics of the OFET are calculated from equations 1and 2, while selected parameters are used to calculate the output characteristics (the linear and saturation regime (Id-Vd) characteristics), as shown in Tables-(1 and 2)
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