Comparison and analysis of gate dielectrics for SiC MOSFET

Abstract

SiC MOSFET has been widely used for its characteristics of lower on-off resistance, less switching loss, higher working frequency, and high-temperature resistance. With the scale down of Moore's Law, better gate dielectrics should be selected to improve the breakdown voltage and reduce the gate-drain current to ensure a good working mode of MOSFETs. The traditional gate dielectric is SiO2 but their dielectric constant is low and the interface characteristics at the junction of SiO2 and SiC are poor so various emerging materials have been created to replace the traditional SiO2. Emerging gate dielectrics such as high-k gate dielectrics are receiving a lot of attention today, they can increase breakdown voltage and decrease gate-drain current while maintaining oxide thickness. Among many emerging gate dielectrics, Al2O3, HfO2, and HfSiON have been noticed due to their good characteristics and a lot of research on them. This paper will focus on the analysis of the characteristics of these three materials and their applications in MOSFET. Finally, after a detailed analysis of the three materials, they three materials are compared to understand their differences.