Comparison among the formation processes of extended defects in Si under irradiation with low-energy H +, He + ions and high-energy electrons

Abstract

Formation processes and characteristics of platelet-like extended defects in FZ Si under the irradiation with low-energy H + ions are examined, and the results are compared with those from He + ion and high-energy electron irradiation. Silicon discs with (0 1 1) surfaces are irradiated by 5 keV H +, 10 keV He + ions between 570 and 870 K, and by 1000 keV electrons between 470 and 670 K. It is considered from the temperature dependence of the characteristics of extended defects induced by H + ion irradiation, that the interaction between self-interstitial atoms and hydrogen becomes weak above 770 K. The formation of {1 1 3} interstitial-type defects is enhanced by hydrogen and helium, and the degree is stronger for hydrogen. It is concluded from the difference between aspect ratios of {1 1 3} defects induced by the irradiation with both kinds of ions, that the mechanism for the enhancement by hydrogen is different from that by helium.