Abstract
ABSTRACT With trap free simulations of single layer and comparisonorganic diodes with sexperimental results, we reason the occurrence some significant featuresof observed and reported in capacitance-voltage-frequency characteristics. We show that the peak in capacitance voltage (C-V) characteristics is due to high capacity in the exponential regime of the current-voltage (I-V) characteristics; the fall in C-V being due to the device entering space charge limited (SCL) regime and that the peak voltage is different from the built-in voltage. We demonstrate extraction of mobility using frequency scaled differentiation of capacitance-frequency (C-f) characteristics. We obtain Poole-Frenkel field dependent mobility parameters for MEH-PPV and m-MTDATA using this technique. Finally, through simulations, we show that the occurrence of negative capacitance not be explained on the basis of Langevin canrecombination rate alone, which points to the role of traps in mediating recombination or slowing it down so as to cause negative capacitance at lower frequencies as observed in experimental samples.
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