Abstract
Scanning tunneling spectroscopy performed at T=6 K is used to investigate the local density of states (LDOS) of electron systems in the bulk conduction band of InAs. In particular, the 3DES of the n-doped material and an adsorbate-induced 2DES located at the surface are investigated at B=0 and 6 T . It is found that the 3DES at B=0 T can be described by Bloch states weakly interacting with the potential disorder. The 2DES at B=0 T exhibits much stronger LDOS corrugations revealing the tendency of weak localization. In a magnetic field both systems show drift states, which are expected in 2D, but are surprising in 3D, where they point to a new electron phase consisting of droplets of quasi 2D-systems.
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