Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells

Abstract

In addition to excellent surface passivation and carrier selectivity, the structure based on the heavily doped polysilicon layer on an ultrathin silicon oxide interlayer also demonstrates strong impurity gettering effects. Herein, the gettering strength of a range of phosphorus‐ or boron‐doped polysilicon films from different fabrication techniques is assessed and compared. Iron, one of the most common metallic impurities in silicon, is used as a tracer impurity to quantify the gettering strength (segregation coefficient). A comparison of the experimental results to the literature, combined with measurements of the electrically active and inactive dopant concentrations, enables us to suggest the main gettering mechanisms in different polysilicon films. The differences in the segregation coefficients of the phosphorus‐doped polysilicon films for iron are within one order of magnitude, in spite of their different combinations of gettering mechanisms. On the other hand, boron‐doped polysilicon films show a large variation in their gettering effects, although the predominant gettering mechanisms are all attributed to electrically inactive boron, according to the current understanding of the gettering mechanisms from the literature. Finally, the impact of different polysilicon gettering effects on the efficiency of tunnel oxide‐passivated contact (TOPCon) cells is simulated and discussed.