Abstract
In the present work, to improve the mechanical properties of silicon carbide different sintering aids were used. 2.5 wt% B4C, 2.5 wt% AlN, and TiC in the 5 to 7 wt% range were selected to manufacture the SiC-based sample via spark plasma sintering at 1700 °C. The results show that the use of 2.5 wt% B4C-2.5 wt% AlN additives increases the strength (1206 MPa) of the composite through the compressive stress created in the grain boundaries and decreases its fracture toughness (5.13 MPa.m1/2). But in the case of TiC-doped SiC, the toughness (7.09 MPa.m1/2) and density (3.18 g/cm3) of the sample increases compared to the pure SiC sample.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.