Compared current-voltage characteristics of silicon and cubic silicon caibine pn-junction based on the silicon substrate

Abstract

Cubic silicon carbide pn junction was synthesized on Silicon substrate by Low pressure chemical vapor deposition. The methane diluted with Hydrogen was used as the reaction carbon source, while silicon substrate was used as the silicon source. The cubic silicon carbide films were characterized by X-ray diffraction, high resolution transmission electron microscopy and current-voltage. It is found that the threshold voltage of cubic silicon carbide is bigger than Si pn junction and the electronic characteristics of cubic silicon carbide pn junction is quite insensitive to ultraviolet light.