Abstract
DC power delivery system is becoming an attractive alternative in an AC dominant world due to its higher energy efficiency and better cable utilization. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection is one of them. Solid state circuit breaker (SSCB) is a viable solution to achieve ultrafast fault protection. A large turn-off current capability is needed for a given solid state device. In this paper, a comparative study on the turn-off capability of multiple Si and SiC solid state devices is presented for the first time. Devices studied include commercially available Si MOSFET, Si CoolMOS, SiC MOSFET, and SiC JFET with the lowest R ds, on for a rated breakdown voltage.
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