Abstract

The second-order optical nonlinearity (SON) of thermally poled fused silica was shown for the first time to be significantly improved by the implantation of multi-energy boron (B) ions, and the outcomes were compared with those obtained from the implantation of multi-energy argon (Ar) ions. Second-harmonic (SH) signals in both samples grew roughly linearly as the poling temperature rose. Samples with Ar implants showed a greater increase in SH signal with rising poling temperature. A qualitative explanation for the formation of [Formula: see text] in poled samples can be found in a model of charge hopping and migration through defects. The diminished SH signal in the B-implanted sample is probably caused by the negative charge trapping layer, as well as by B[Formula: see text] and E[Formula: see text] center defects.

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