Abstract
This paper presents the comparative study on the repetitive unclamped inductive load switching capabilites in comercialized 1200V, 160mΩ rated SiC MOSFETs. Recently released Littelfuse-Monolith 1200V 160 mOhm design (LSIC1MO120E0160) manufactured through 150mm high volume CMOS compatible process demonstrated excellent R-UIS capabilities: no parametric shift on key electrical performances such as on-resistance, threshold voltage, breakdown voltage and drain leakage current after 100000 cycles of R-UIS stress. Both Competitor A and B design with planar gate showed R-UIS capabilities. All critical parameters were within the datasheet specification after R-UIS test. Competitor A design was equivalent to LSIC1MO120E0160. Competitor B design showed the drain leakage increase after 2000 cycle of R-UIS stress. Competitor C design with trench gate did not exhibit any R-UIS capabilities.
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