Abstract
The investigation on the photovoltaic characteristics of two InGaN/GaN multiple-quantum-well (MQW) solar cells with different QW parameters, but having nearly the same spectral response range, is assisted by the capacitance-voltage (C-V) measurements. Based on the laser-assisted C-V technique as well as the X-ray reciprocal space mapping measurements, it is found the enhanced external quantum efficiency of solar cell consisting of the InGaN QWs having thicker well layer and lower In content can be ascribed to the lower effective potential barrier height, the larger active volume and the better material quality. In addition, it suggests that for InGaN MQW solar cells, a proper increase of the InGaN well layer thickness may be a good choice to extend the spectral response into longer wavelength region.
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