Abstract
The charge-trapping memory (CTM) structures Pt/Al2O3/TaAlO/Al2O3/p-Si and Pt/Al2O3/ZrAlO/Al2O3/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially designed. With a lower PBCB difference between TaAlO and p-Si than that between ZrAlO and p-Si, TaAlO CTM device shows a better charge-trapping performance. A density of trapped charges 2.88 × 1013/cm2 at an applied voltage of ±7 V was obtained for TaAlO CTM device, and it could keep about 60% of initially trapped charges after 10 years. It was suggested that the PBCB difference between high-k composite and p-Si dominates their charge-trapping behaviors.
Highlights
Silicon-oxide-nitride-oxide-silicon (SONOS)-type memory device as one of the charge-trapping (CT) memory devices has received considerable interest.[1,2,3] With continuous down-scaling the cell dimension to obtain high data-storage density, high programing/erasing speeds, low operating voltage and low power consumption, some intrinsic limitations make this kind of memory rapidly approach the scaling limit.[4]
In order to introduce a high density of defect states, in this paper Al2O3 with a band gap of 8.8 eV,[20] in which Al3+ shows different coordination number with Ta5+ in Ta2O5 and Zr4+ in ZrO2, was employed to form high-k composites TaAlO and ZrAlO, and the effect of the PBCB difference between p-Si and high-k composite on the charge-trapping properties of TaAlO and ZrAlO charge-trapping memory (CTM)
The microstructures of two memory devices were investigated by using high resolution transmission electron microscopy (HRTEM)
Summary
Silicon-oxide-nitride-oxide-silicon (SONOS)-type memory device as one of the charge-trapping (CT) memory devices has received considerable interest.[1,2,3] With continuous down-scaling the cell dimension to obtain high data-storage density, high programing/erasing speeds, low operating voltage and low power consumption, some intrinsic limitations make this kind of memory rapidly approach the scaling limit.[4]. Comparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment
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