Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers

Abstract

Linewidth broadening of exciton luminescence in wurtzite and zinc-blende GaN epilayers was investigated as a function of temperature with photoluminescence. A widely accepted theoretical model was used to fit the experimental data, so that the coupling parameters between exciton and acoustic and longitudinal optical phonons were obtained for both structures. It was found that the coupling constants of both exciton–acoustic optical phonon coupling and exciton–longitudinal optical phonon coupling for zinc-blende GaN are almost twice as much as the corresponding values of wurtzite GaN. These results show that the relatively strong exciton–phonon scattering seems to be characteristic to zinc-blende GaN film.