Abstract
Tellurium trioxide (TeO 3) and tellurium dioxide (TeO 2) thin film has been deposited by rf sputtering. The influence of γ-radiation doses (in the range 10–50 Gy) on the optical and electrical properties of as-deposited films were studied. Optical band gap values were found to decrease with increasing radiation dose whereas electrical conductivity was increased by about five orders in magnitude. Monotonic decrease in the values of dielectric constant for the deposited TeO 3 films with increase in radiation dose was observed. The γ-ray response behavior of TeO 3 and TeO 2 thin films are compared, and TeO 3 thin film is found to be more suitable in amorphous form for γ-ray detection.
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