Abstract
The authors report a comparative study on ex situ passivation of a near-surface GaAs0.86P0.14/Al0.6Ga0.4As quantum well using various sulfide solutions and nitrogen plasma treatments. The built-in surface electric field is changed via band bending by applying various surface passivation conditions. The band bending is measured using x-ray photoelectron spectroscopy. Reduction in surface electric field in the range of 10–35 kV/cm is observed depending on different passivation conditions. The photoreflectance spectra show enhancement in intensity and blueshift of ∼3 meV accompanied by significant reduction in the broadening parameter of the observed e1-lh1 transitions. Among all the methods studied here, passivation by Na2S⋅xH2O is found to be most effective as it removes the native oxide layer completely leading to almost flat band condition.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
