Abstract
GaAs/Si heterostructure fabricated by N2 and O2 plasma-activated direct bonding process at low temperature are compared and analyzed experimentally. At low activation energy, the surface hydrophilicity and morphology of GaAs and Si under different activation times are compared. The surface hydrophilicity of activated GaAs and Si substrates is enhanced and the surface roughness and defect state are effectively suppressed. X-ray photoelectron spectrometer (XPS) is used to analyze the surface chemical composition of GaAs and Si substrates before and after activation. The image of transmission electron microscopy (TEM) confirms the strong bonding interface of GaAs/Si. Then, the element composition at the interfaces of the GaAs/Si pairs is analyzed by energy dispersive spectroscopy (EDS). The bonding mechanism has been investigated. Appropriate plasma activation process is used to realize the construction of GaAs/Si platform in different fields such as electronics, optics, machinery and biomedicine.
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