Comparative study on extraction methods of threshold voltage for thin‐film transistors

Abstract

AbstractIn this work, we proposed three methods on extracting threshold voltage of ploy‐silicon thin‐film transistors, such as, extrapolation of the linear region, transconductance linear extrapolation, and second derivation. Based on these different methods, one can extract various values of threshold voltages, as well as their temperature dependence. In room temperature, the second derivation method is the most appropriate for thin‐film transistors. More remarkably, the different methods show the different temperature dependence of mobility, corresponding to different charge transport mechanisms. That is, hopping dominates the transport mechanism for extrapolation of the linear region method, while it will occur to transform from band‐like to hopping mechanism for the second derivative method.