Abstract

We investigated UV absorption changes induced in 3.5mol% Ge-doped fused silica at high-intensity (∼1011–1013W/cm2) femtosecond (130fs) irradiation at 267, 400 and 800nm. We have shown that the induced spectra in the region 190–300nm are similar in all three cases. At 800nm irradiation, in addition to the UV absorption changes, we observed small-scale damage due to self-focusing. This damage appears when the incident pulse fluence value of about 1J/cm2 (pulse intensity of about 7.5×1012W/cm2) is overcome, while the threshold for the induced absorption changes is twice lower.

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