Abstract
It is shown that photoconductivity transients in a-Si:H measured in a coplanar electrode configuration and by microwave reflection are identical. This proves that transients obtained with these techniques reflect free charge carrier kinetics where the influence of contacts can be neglected. Evidence is given that charge carrier transport is different in the surface layer and in the bulk. The influence of the temperature and the exciting light intensity on transient photoconductivity data are explained by a tentative recombination model which takes dispersive transport of holes and electrons into account.
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