Abstract
The capping layers have great influences on the ferroelectricity of the Hf0.5Zr05O2 (HZO) film during annealing process. In this paper we compared the properties of the HZO film with two inorganic nonmetallic capping layers and no capping layer. The remnant (2Pr) of HZO films are 23.5 uC/cm2, 27.3 uC/cm2 and 20.3 uC/cm2 for no capping layer, Si3N4 capping layer and SiO2 capping layer, respectively. The capping layer can change the direction of the coercive filed shift even though the capacitors have the same metal electrodes.
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