Comparative study of the impact of interpad nominal length on the onset of the charge multiplication in standard segmented LGAD with 2 p-stops and bias ring as isolated structures

Abstract

We present an investigation of the interpad region (IP) in the Ultra-Fast Silicon Detector (UFSD) Type 10, utilizing a femtosecond laser and the transient current technique (TCT). We elucidate the isolation structure and measure the IP distance between pads, comparing it to the nominal value provided by the vendor. A comparison of sensors with identical layouts but different nominal IP distances (49 μm vs. 61 μm) and different processing parameters revealed their significant different charge collection properties in the IP.