Abstract
Two series of ternary semiconducting glasses with composition 65 TeO2-(35−x)CuO-xMO in mole percent (x=0, 0.5, 1, 2, 3, 4 and M stands for Co or Ni) were prepared by a melt quenching technique. The densities of annealed and unannealed disc-shaped samples and the optical energy gap of thin blown films of both series of glasses were measured, and the comparative effect of each transition metal (TM) oxide was estimated. It was found that forx=0.5 to 1 mol% andx=2 to 4mol%, the optical energy gap (Eopt) was somewhat greater in TeO2-CuO-NiO than in TeO2-CuO-CoO glasses. This increase inEopt is interpreted in terms of the decreasing number of non-bridging oxygen ions with the increase of each TM oxide. NiO was found to be more effective in increasing the density than CoO in annealed copper tellurite glasses.
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