Abstract
Nonpolar (112̄0) and semipolar (112̄2) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs). Transmission electron microscopy reveals that the density of BSFs for the semipolar (112̄2) and nonpolar a-plane GaN template is 3×105 cm−1 and 8×105 cm−1, respectively. The semipolar (112̄2) GaN shows an arrowhead-like structure, and the nonpolar a-plane GaN has a much smoother morphology with a streak along the c-axis. Both nonpolar (112̄0) and semipolar (112̄2) GaN have very strong BSF luminescence due to the optically active character of the BSFs.
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