Abstract
The paper emphasized on different characteristics AlInGaN/InGaN and AlInGaN/GaN heterostructures for enhancing the device performance. Effect of changing mole fraction in bandgap, strain, polarization have been investigated. Amount of sheet charge density created on the heterointerfaces of AlInGaN /InGaN and AlInGaN/GaN heterostructures have been calculated. It has been observed that with the increment of Indium mole fraction and the decrement of Aluminium mole fraction, the total polarization increases hence larger 2DEG and sheet charge density is created.
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